Self-rotating grinding motion analysis and simulation of large-size silicon wafer

October 06 07:01:20, 2024

Abstract In this paper, the mathematical matrix method is used to establish the theoretical model of the self-rotating grinding motion of large-size silicon wafers. The selection of factors such as the radius of the grinding wheel, the rotation speed of the silicon wafer and the grinding wheel, the direction of rotation and the influence of various factors on the grinding trajectory are studied. The variation of the moving speed of abrasive particles was also studied. The research results show that with the increase of the radius of the grinding wheel, the curvature of the grinding track is reduced, and the selection of the smaller diameter grinding wheel will be more beneficial to the improvement of the surface quality of the silicon wafer. When the rotational speed ratio i is greater than zero, the curvature of the grinding trajectory gradually decreases as the value of i increases. In the case where the rotational speed ratio i is less than zero, when the rotational speed ratio i=-2, the curvature of the grinding trajectory is O, and the shape of the grinding trajectory is close to a straight line. The moving speed of the abrasive particles increases with the increase of the grinding wheel speed and the speed of the silicon wafer. (Diamond and Abrasives Engineering, 2009, Issue 5)

Abstract By use of matrix method, the mathematical model of grinding marks on large size wafer self-rotating grinding is developed. With the developed model, the selection principles of the factors which include the radius of the diamond wheel, the rotating speed, the rotating direction of the silicon wafer and diamond wheel, and the relationships between grinding marks and those factors are discussed. The rules of resultant motion speed of abrasive grains are also studied. The results show that the curvature of the grinding marks will get less curved as the radius of the diamond wheel increases. A smaller diamond wheel will be better for the improvement of the surface quality of the silicon wafer. When the speed ratio i is positive, the grinding marks tend to be less curved as the speed ratio i increases. In case that the speed ratio i is negative, the curvature of the grinding mark is about 0 and the grinding mark is approximately a line when the speed ratio i is-2. The resultant motion speed of the abrasive grains goes up as the rotating speed Of the diamond wheel and the wafer increases.

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